P3M173K0T3
Part number
P3M173K0T3
Product Category
Single FETs, MOSFETs
Manufacturer
PN Junction Semiconductor
Description
SICFET N-CH 1700V 4A TO-220-3
Encapsulation
Tube
Packing
Quantity
1600
RoHS status
NO
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Minimum : 0
Quantity
Price
Total price
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-220-2
Current - Continuous Drain (Id) @ 25°C
4A
Supplier Device Package
TO-220-2L
Drive Voltage (Max Rds On, Min Rds On)
15V
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Vgs (Max)
+19V, -8V
Power Dissipation (Max)
75W
Rds On (Max) @ Id, Vgs
2.6Ohm @ 600mA, 15V
Vgs(th) (Max) @ Id
2.2V @ 600µA (Typ)
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