RM12N650T2
Part number
RM12N650T2
Product Category
Single FETs, MOSFETs
Manufacturer
Rectron USA
Description
MOSFET N-CH 650V 11.5A TO220-3
Encapsulation
Tube
Packing
Quantity
3600
RoHS status
NO
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Inventory
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Grade
-
Qualification
-
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 50 V
Power Dissipation (Max)
101W (Tc)
Rds On (Max) @ Id, Vgs
360mOhm @ 7A, 10V
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