TPH3207WS
Part number
TPH3207WS
Product Category
Single FETs, MOSFETs
Manufacturer
Transphorm
Description
GANFET N-CH 650V 50A TO247-3
Encapsulation
Tube
Packing
Quantity
1600
RoHS status
NO
Inventory
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-247-3
Vgs (Max)
±18V
Power Dissipation (Max)
178W (Tc)
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 8 V
Technology
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs
41mOhm @ 32A, 8V
Vgs(th) (Max) @ Id
2.65V @ 700µA
Input Capacitance (Ciss) (Max) @ Vds
2197 pF @ 400 V
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