TPH3208LS
Part number
TPH3208LS
Product Category
Single FETs, MOSFETs
Manufacturer
Transphorm
Description
GANFET N-CH 650V 20A 3PQFN
Encapsulation
Tube
Packing
Quantity
1600
RoHS status
NO
Inventory
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
96W (Tc)
Vgs (Max)
±18V
Technology
GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 400 V
Rds On (Max) @ Id, Vgs
130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id
2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 8 V
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN
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